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Current Research

  • Carrier Dynamics in Embedded Nanocrystals (NC)
    • Quantum confined impact ionization (carrier multiplication)
    • Auger recombination: electron-initiated, hole-initiated and biexciton type

  • Electronic and Linear Optical Properties of Si and Ge NCs
    • Quantum-confined Stark effect
    • Interband, intraband and excited-state absorption
    • Si NC laser and third generation solar cell applications

  • Nonlinear Optics of Si and Ge NCs
    • Third-order Kerr nonlinearities
    • All optical switching applications

  • Atomistic Mechanical Structure Modelling of Si NCs embedded in Oxide
    • Reactive Force Field-based interface chemistry
    • Atomistic strain distribution in embedded NCs

  • Optical Properties and High-field transport in Nitrides
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    • Carrier induced refractive index change (Burstein-Moss effect) in InN
    • InN bulk transport with hot phonon effects
    • Solar-blind AlxGa1-xN avalanche photodedectors
    • High-harmonic mode sub-millimeter wave Gunn oscillators in GaN
  • Ab initio DFT Work
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    • Novel high-k dielectric constant silver-oxide phase of SiO2, GeO2, SnO2
    • Electronic and Structural properties of Oxides and Nitrides: alpha-Crystobalite, beta-Crystobalite, alpha-Quartz, Stishovite and Cubic Phases of SiO2, alpha-Quartz, Rutile and Cubic Phases of GeO2, alpha and beta Phases of Ge3N4, alpha and beta Phases of Si3N4 and Al2O3